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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF30SC3L 30V 30A FEATURES *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching OUTLINE DIMENSIONS Case : FTO-220 Unit : mm power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 Z * Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V 30 V RM Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 V Pulse width 35 V RRSM Average Rectified Forward Current wave, R-load, Rating for each diode Io/2, T I 50Hz sine O 30 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peakA value, Tj 350 P Pulse width Repetitive Peak Surge Reverse Power 10Es, Rating of per diode, Tj=25*Z RRSM 1000 W Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR(Recommended torque* 0.3Nm) 0.5 Nm F *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit V IF Forward Voltage Max.0.45 diode F =12.5A, Pulse measurement, Rating of perV IR V=V,M Pulse measurement, Rating of per diode Reverse Current Max.15mA RR Junction Capacitance Cj f=1MHz, V Rating of per diodeTyp.960pF =10V, R Thermal Resistance AEjc junction to case Max.2.0 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF30SC3L Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] SF30SC3L Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] SF30SC3L 10000 Reverse Current Tc=150C [MAX] 1000 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 100 Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] SF30SC3L 70 Reverse Power Dissipation DC D=0.05 0.1 0.2 Reverse Power Dissipation PR [W] 60 50 0.3 40 0.5 30 20 SIN 0.8 10 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T SF30SC3L 24 Forward Power Dissipation Forward Power Dissipation PF [W] 20 SIN 0.5 D=0.8 DC 16 0.05 12 0.1 0.2 0.3 8 4 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T SF30SC3L 60 Derating Curve Average Rectified Forward Current IO [A] 50 DC D=0.8 40 0.5 30 SIN 0.3 0.2 20 0.1 10 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 15V 0 0 IO VR tp D=tp /T T SF30SC3L 500 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 400 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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